Leaks reveal Samsung Galaxy S27 Ultra may include next-gen LPDDR6 RAM and Snapdragon 8 Elite Gen 6 Pro chip, boosting performance for gaming and multitasking.
© A. Krivonosov
Samsung appears to be preparing a significant technological leap for its future flagship, the Galaxy S27 Ultra. According to the latest leaks, the device could be among the first smartphones to feature next-generation LPDDR6 RAM, promising a noticeable performance boost.
This new memory type is expected to offer higher bandwidth and better energy efficiency compared to the current LPDDR5X standard. In practical terms, this could translate to smoother multitasking, faster app loading, and improved performance for resource-intensive tasks like mobile gaming and AI-based features.
The smartphone is expected to be powered by the Snapdragon 8 Elite Gen 6 Pro chip—a more powerful version of Qualcomm's new flagship processor. It may feature an enhanced Adreno 850 graphics accelerator with 18 MB of GMEM memory, while the standard chip version is rumored to use an Adreno 845 with 12 MB. Both variants are reportedly being manufactured on TSMC's 2nm process and use a 2+3+3 core configuration.
Despite the ongoing development of its own Exynos 2700 and 2800 chips, Samsung will likely continue to rely on Qualcomm solutions for the Ultra model in most regions. However, adopting these new technologies could impact the device's price, as rising memory and component costs are already putting pressure on the market.
If this information proves accurate, the Galaxy S27 Ultra could be one of the first smartphones to fully transition to the new generation of mobile hardware, potentially setting the direction for the entire industry in the coming years.