Following its Q1 2026 financial disclosure, Samsung Electronics has shifted attention squarely to its memory business, unveiling fresh strategy details. Most notably, the company intends to begin testing next-generation HBM4E memory in the second quarter, a move widely seen as critical for advancing AI and high-performance computing.
Meanwhile, the market is witnessing a dramatic price upswing: average DRAM costs have soared over 90% year-on-year, with NAND flash following a nearly identical trajectory. This spike reflects intensifying competition for fabrication capacity, as major players pour investments into AI infrastructure and lock in component supply well ahead of time.
Samsung projects a threefold surge in HBM memory sales for 2026, and by the third quarter, more than half of that segment's revenue is expected to come from the new HBM4 generation. For readers tracking industry trends, this underscores a broader pivot toward solutions built for massive data processing and machine learning.
The company is also expanding its manufacturing footprint. The second half of the year should see the introduction of a second-generation 2-nanometer process for mobile devices, along with continued development of 4-nm solutions, including dedicated AI chips. In the U.S., the Taylor project is picking up speed, with factory capacity being ramped up to target mass production in 2027.
Additionally, Samsung is pushing into premium products and new display technologies, including volume production of 8.6-generation IT OLED panels. Against a backdrop of rising component prices and fiercer competition, the strategy leans on technological leadership and production scale to strengthen its market position.