Samsung Electronics has reportedly developed a prototype of 900-layer V-NAND, a next-generation vertical flash memory, according to insider Ice Universe and industry media. If officially confirmed, this would mark a significant step toward the 1,000-layer milestone, long considered a key goal for the NAND memory industry.
The prototype is said to be built not by simply stacking layers on a single die, but by combining two 450-layer blocks using CMB (Cell-on-Cell/multi-layer bonding) technology. This approach increases layer count and storage density while bypassing some of the technological hurdles manufacturers face when scaling NAND vertically.
For Samsung, this demonstration is especially important amid rising demand for storage in servers, AI infrastructure, PCs, and mobile devices. The company already produces 9th-generation V-NAND: in 2024, it announced mass production of 1-terabit TLC V-NAND, followed by 9th-gen QLC V-NAND for AI-driven applications.
The 900-layer prototype does not mean consumer SSDs with this memory are imminent. Between lab development and mass production lie challenges such as yield rates, cost, reliability, power consumption, and compatibility with future controllers. Still, the successful validation of this structure shows that Samsung continues to pursue a path toward significantly higher capacity without proportionally increasing die size.
If the technology reaches volume production, it could form the basis for much higher-capacity SSDs, ranging from consumer drives to enterprise solutions for data centers. Against the backdrop of competition with SK hynix, Micron, YMTC, and others, it's crucial for Samsung not only to maintain its NAND leadership but also to prove it can be the first to approach the next generation of ultra-dense flash memory.