Insider Jukan reported that Samsung Electronics is preparing mass production of seventh-generation DRAM in the 10 nm class, better known as 1d DRAM. According to him, the company is already working with several partners on equipment for the new process and expects to begin introducing it in the second quarter of next year.
1d DRAM refers to memory with line widths of roughly 10–11 nm. By comparison, current sixth-generation 1c DRAM is estimated at about 11–12 nm. The smaller that figure gets, the higher the potential performance and energy efficiency of the memory. With demand rising from servers, AI accelerators, and HBM, even that difference matters.
Samsung is already carrying out internal evaluations, including early 1d DRAM samples. Earlier reports suggested the company could move to mass production as early as this year, but industry sources consider that unlikely. The reason is straightforward: key equipment for 1d DRAM still appears to be in development.
According to the insider, Samsung is now discussing the installation of production equipment with partners in the second quarter of next year. Considering the time needed to tune the lines and prepare production, actual mass output may begin no earlier than late next year. A clearer schedule is expected closer to the end of this year.
Industry sources say Samsung is actively working to stabilize 1d DRAM yields and specifications. For the company, this is not just another process shrink, but an important part of its future strategy for AI-focused memory.
1d DRAM is expected to become the base die for HBM5E, the ninth generation of high-bandwidth memory, whose commercialization is forecast for 2029. If Samsung brings the new process online on time, it could strengthen its position in the memory race against SK Hynix and Micron.