Leaked Geekbench 6 shows the 2 nm Exynos 2600 nearly matching Snapdragon 8 Elite Gen 5, a 53.5% gen-on-gen jump. Power efficiency could decide the Galaxy S26.
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Samsung looks ready to win back confidence in its silicon. A fresh benchmark leak suggests the new Exynos 2600, built on a 2 nm GAA process, has closed in on the flagship Snapdragon 8 Elite Gen 5.
According to Geekbench 6, the Exynos 2600 posted 3,309 points in single-core and 11,256 in multi-core tests. For comparison, the Galaxy S26 Edge running the Snapdragon 8 Elite Gen 5 reached 3,393 and 11,515 points, respectively. The gap is razor-thin—about 2.5% in Qualcomm’s favor.
What stands out is that the Snapdragon in this run operated at reduced clock speeds (4.0 GHz versus its nominal 4.74 GHz), leaving headroom for both chips to stretch further. For Samsung, this marks a notable leap: the improvement over the previous generation comes to 53.5%. The momentum is finally visible on the chart, not just in roadmaps.
The real test now is power efficiency. That metric will be decisive for the Galaxy S26 and other forthcoming models. If the Exynos 2600 can not only catch up but edge past Snapdragon in performance per watt, Samsung could find itself back among the leaders of the mobile chip race—and the conversation around Exynos would change just as quickly.