InnoScience, UAES and Naixinwei sign a strategic pact to develop GaN-based power electronics for next-gen EVs, boosting efficiency, density and reliability.
© A. Krivonosov
On October 1, InnoScience, United Automotive Electronic Systems (UAES), and Naixinwei announced they had signed a strategic cooperation agreement to develop innovative gallium nitride (GaN)-based products for the next generation of electric vehicles.
Their joint development will focus on integrating GaN into power electronic systems to raise energy density, reliability, and efficiency. Compared with traditional silicon solutions, GaN supports more compact designs and helps cut weight and energy consumption—benefits that are especially relevant to electrification and vehicle lightweighting.
The partnership brings together complementary strengths: UAES in automotive system integration, Naixinwei in high-performance analog and mixed-signal chip design, and InnoScience in power GaN components. Taken together, the alliance reads as a practical bet on making GaN a core building block in EV power electronics. The companies aim to establish a cross-industry innovation platform and accelerate the rollout of new solutions in manufacturing, supporting sustainable development and the rising value of the electric-vehicle sector.