Samsung reaches 50% HBM4 yield and expands capacity using ASML High-NA EUV, paving the way for HBM4E/HBM5. SK hynix leads with HBM3E for NVIDIA Blackwell GPUs.
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According to TweakTown, Samsung has reached a 50% yield on HBM4 built on 1c DRAM and is actively expanding capacity for volume production of HBM4 and HBM4E. Sources say the company has bought five of ASML’s newest High-NA EUV lithography systems: two set for the foundry business and three earmarked solely for memory—a split that underscores a deliberate tilt toward HBM.
Industry experts believe Samsung is effectively building a dedicated memory line, a step that should speed up HBM4 mass production while laying the groundwork for future HBM4E and HBM5. For now, the DRAM operation at the Pyeongtaek fab turns out about 300,000 wafers per month, with capacity close to its limit. Some of the new tools could be redirected to the company’s Taylor, Texas plant if additional orders arrive from key North American clients, keeping the ramp adaptable.
Meanwhile, main rival SK hynix remains in front, supplying NVIDIA with HBM3 and HBM3E for Blackwell GPUs. Analysts say Samsung’s intensified investment in HBM will inevitably heat up competition across the high-performance memory market, setting the stage for a tighter race.